1 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90c_f109 rev. c0 fqa11n90c_f109 n-channel qfet ? mosfet fqa11n90c_f109 n- channel qfet ? mosfet 900 v, 11 a, 1.1 ? ? 11 a, 900 v, r ds(on) = 1.1 ? (max.) @ v gs = 10 v, i d = 5.5 a ? low gate charge (typ. 60 nc) ? low crss (typ. 23 pf) ? 100% a valanche tested ? rohs compliant description this n-channel enhancement mode power mosfet is produced using fairchild semiconductor ? s proprietary planar stripe and dmos technology. this advanced mosfet technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy strength. these devices are suitable for switched mode power supplies, active power factor correction (pfc), and electronic lamp ballasts. absolute maximum ratings thermal characteristics d g s to-3pn symbol parameter fqa11n90c_f109 unit v dss drain-source voltage 900 v i d drain current - continuous (t c = 25c) 11.0 a - continuous (t c = 100c) 6.9 a i dm drain current - pulsed (note 1) 44.0 a v gss gate-source voltage 30 v e as single pulsed avalanche energy (note 2) 960 mj i ar avalanche current (note 1) 11.0 a e ar repetitive avalanche energy (note 1) 30 mj dv/dt peak diode recovery dv/dt (note 3) 4.0 v/ns p d power dissipation (t c = 25c) 300 w - derate above 25c 2.38 w/c t j , t stg operating and storage temperature range -55 to +150 c t l maximum lead temperature for soldering purposes, 1/8 from case for 5 seconds 300 c symbol parameter fqa11n90c_f109 unit r jc thermal resistance, junction-to-case , max. 0.42 c /w r cs thermal resistance, case-to-sink , typ. 0.24 c /w r ja thermal resistance, junction-to-ambient , max. 40 c /w features april 2013 g d s
package marking and ordering information electrical characteristics t c = 25c unless otherwise noted notes: 1. repetitive rating : pulse width limited by maximum junction temperature 2. l = 15mh, i as =11.0a, v dd = 50v, r g = 25 ?, starting t j = 25c 3. i sd 11.0a, di/dt 200a/ s, v dd bv dss, starting t j = 25c 4. pulse test : pulse width 300 s, duty cycle 2% 5. essentially independent of operating temperature device marking device package reel size tape width quantity fqa11n90c fqa11n90c_f109 to-3pn -- -- 30 symbol parameter test conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0 v, i d = 250 a 900 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 a, referenced to 25c -- 1.02 -- v/c i dss zero gate voltage drain current v ds = 900 v, v gs = 0 v -- -- 10 a v ds = 720 v, t c = 125c -- -- 100 a i gssf gate-body leakage current, forward v gs = 30 v, v ds = 0 v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30 v, v ds = 0 v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 a3 . 0- -5 . 0v r ds(on) static drain-source on-resistance v gs = 10 v, i d = 5.5 a -- 0.91 1.1 ? g fs forward transconductance v ds = 50 v, i d = 5.5 a (note 4) -- 9.0 -- s dynamic characteristics c iss input capacitance v ds = 25 v, v gs = 0 v, f = 1.0 mhz -- 2530 3290 pf c oss output capacitance -- 215 280 pf c rss reverse transfer capacitance -- 23 30 pf switching characteristics t d(on) turn-on delay time v dd = 450 v, i d = 11.0a, r g = 25 ? (note 4, 5) -- 60 130 ns t r turn-on rise time -- 130 270 ns t d(off) turn-off delay time -- 130 270 ns t f turn-off fall time -- 85 180 ns q g total gate charge v ds = 720 v, i d = 11.0a, v gs = 10 v (note 4, 5) -- 60 80 nc q gs gate-source charge -- 13 -- nc q gd gate-drain charge -- 25 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 11.0 a i sm maximum pulsed drain-source diode forward current -- -- 44 a v sd drain-source diode forward voltage v gs = 0 v, i s =11.0 a -- -- 1.4 v t rr reverse recovery time v gs = 0 v, i s = 11.0 a, di f / dt = 100 a/ s (note 4) -- 1000 -- ns q rr reverse recovery charge -- 17.0 -- c 2 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90c_f109 rev. c0 fqa11n90c_f109 n-channel qfet ? mosfet
typical performance characteristics figure 1. on-region characteristics f igure 2. transfer characteristics figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate vo ltage variation vs . source current and temperatue figure 5. capacitance characteristics f igure 6. gate charge characteristics 10 -1 10 0 10 1 10 -1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v notes : ? 1. 250 s pulse test 2 . t c = 25 ? i d , drain current [a] v ds , drain-source voltage [v] 24681 0 10 -1 10 0 10 1 150 o c 25 o c -55 o c notes : ? 1. v ds = 50v 2. 250 s pulse test i d , drain current [a] v gs , gate-source voltage [v] 0.2 0.4 0.6 0.8 1.0 1.2 1.4 10 -1 10 0 10 1 150 ? notes : ? 1. v gs = 0v 2. 250 s pulse test 25 ? i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 5 10 15 20 25 30 0.5 1.0 1.5 2.0 2.5 v gs = 20v v gs = 10v note : t ? j = 25 ? r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] 0 10203040506070 0 2 4 6 8 10 12 v ds = 450v v ds = 180v v ds = 720v note : i ? d = 11a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 500 1000 1500 2000 2500 3000 3500 4000 4500 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd notes : ? 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitance [pf] v ds , drain-source voltage [v] 3 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90c_f109 rev. c0 fqa11n90c_f109 n-channel qfet ? mosfet
typical performance characteristics (continued) figure 7. breakdown voltage variatio n figure 8. on-resistance variation vs. temperature vs. temperature figure 9. maximum safe operating area figure 10. maximum drain current vs. case temperature figure 11. transient thermal response curve -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 notes : ? 1. v gs = 0 v 2. i d = 250 a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 notes : ? 1. v gs = 10 v 2 . i d = 5.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] 10 0 10 1 10 2 10 3 10 -2 10 -1 10 0 10 1 10 2 10 s dc 10 ms 1 ms 100 s operation in this area is limited by r ds(on) notes : ? 1. t c = 25 o c 2 . t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] 25 50 75 100 125 150 0 2 4 6 8 10 12 i d , drain current [a] t c , case temperature [ ] ? 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 notes : ? 1. z jc (t) = 0.42 /w m ax. ? 2. d u ty f actor, d = t 1 /t 2 3. t jm - t c = p dm * z jc (t) s in g le p u lse d=0.5 0.02 0.2 0.05 0.1 0.01 z jc (t), thermal response t 1 , square w ave pulse duration [sec] t 1 p dm t 2 4 www.fairchildsemi.com ?2007 fairchild semiconductor corporation fqa11n90c_f109 rev. & |